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Omnikalc

MOSFET power loss and temperature calculator

Estimate the conduction and switching losses of a MOSFET used as a PWM switch, the total power it dissipates and its junction temperature for a given thermal resistance.

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V

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A

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mΩ

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%

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kHz

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ns

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°C/W

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Results

Total power dissipated

0.870 W

Estimated junction temperature

79 °C

Comfortable junction temperature
Conduction loss
0.750 W
Switching loss
0.120 W
Thermal resistance needed to stay at 100 °C
86.2 °C/W
Share of losses from switching
14%

Where a switching MOSFET loses power

A MOSFET used as a PWM switch dissipates power in two ways:

  • Conduction loss while it is on: the drain current flows through its on-resistance Rds(on).
  • Switching loss during each transition, when voltage and current overlap for a few nanoseconds.

The heat raises the junction temperature, which must stay below the rating (usually 150 or 175 °C) with margin.

The formulas

  • Conduction: P_cond = I² × Rds(on) × k_hot × duty cycle
  • Switching: P_sw ≈ ½ × V × I × (t_rise + t_fall) × f
  • Junction temperature: T_j = T_ambient + P_total × R_θ

Rds(on) increases with temperature, typically by 1.5 to 1.7 times at 100 °C, so the calculator applies a multiplier.

Example

Switching 10 A at 12 V with a 10 mΩ MOSFET, 50% duty cycle, 20 kHz and 100 ns of combined rise and fall time:

Item Value
Conduction loss (hot) 0.75 W
Switching loss 0.12 W
Total 0.87 W
Junction temperature, TO-220 without heat sink (62 °C/W) about 79 °C

At 200 kHz the switching loss would grow tenfold to 1.2 W and dominate.

Reducing losses

  • Choose a lower Rds(on) part for high currents and a lower gate charge part for high frequencies.
  • Drive the gate hard: a proper gate driver with 1 to 2 A of peak current shortens transitions. A microcontroller pin driving a large MOSFET directly switches slowly.
  • Use a logic-level MOSFET specified at your gate voltage (for example Rds(on) at Vgs = 4.5 V for 5 V logic).
  • Add a heat sink or copper area: the needed thermal resistance is shown in the results.

Thermal resistance

Total thermal resistance from junction to air is the sum of junction-to-case, case-to-sink (with thermal paste or a pad) and sink-to-air. A TO-220 alone in still air is about 62 °C/W; on a medium heat sink it can drop below 10 °C/W.

Limits

This is a first estimate. It ignores gate drive loss, body diode conduction, reverse recovery and ringing, which matter in fast, high-voltage designs. Check the datasheet’s safe operating area and measure the case temperature on the prototype.

Frequently asked questions

How do I calculate MOSFET conduction loss?

Multiply the square of the drain current by Rds(on) at operating temperature and by the duty cycle. 10 A through 15 mΩ at 50% gives 0.75 W.

When do switching losses matter?

At high frequencies and high voltages. They grow in proportion to frequency, so a design that is fine at 20 kHz may overheat at 200 kHz.

Why does Rds(on) increase when hot?

The resistance of the silicon channel rises with temperature, typically 1.5 to 1.7 times at 100 °C compared with 25 °C, which increases conduction loss.

Do I need a heat sink?

If the estimated junction temperature without one exceeds about 100 to 110 °C, yes. The calculator shows the total thermal resistance needed to stay at 100 °C.

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Results are estimates provided for information purposes. They do not replace professional advice.